suspended CVD graphene
semiconducting nanowire
spininjection into graphene
...based on a semiconducting nanowire
device made from NbTiN
for circuit QED
Roy’s paper “Phase dependent microwave response of a graphene Josephson junction” is now out. See Phys. Rev. Research 4, 013198 (2022). Roy shows that one can obtain both the resistive the resistive loss and the critical current from GHz reflectometry measurements.
On the 3rd of March we went to Lenk in the Berneroberland to enjoy “airboarding”. Never done airboarding? Then, watch here: It was a lot of fun and the weather was great this time…! Thanks Roy and
The quantum- and nanoelectronics group wishes you the best for 2022!
Today, 1st Nov. the 5th Graphene (2D) workshop starts in Basel: 5th Graphene Workshop We welcome all the participants!
Transiting back from Corona modus to more “normal” meetings, we decided to reshuffle our group online meetings. We will keep the Monday meeting as our regular weekly meeting with a topical talk. Research progress will be discussed on Tuesday alternating
We participated in the Sola21 last Saurday the 23rd of Oct. It was a great event on a very sunny day, but freezing cold in the morning We ended up in rank 55, one rank before the team “Bundeshaus”: Here
There is an opening for a postdoctoral fellow in the domain of circuit QED with hybrid-superconducting gatemon-type devices. See: description
What a difference to corona lock-down: we went together for two days to the Engadin, to Pontersina. It was a wonderful event with two days of beautiful sunshine and activities. On the first day we went to the Diavolezza. This
Joost Ridderbos is leaving us. He will go back to the University of Twente and work in the group of Floris Zwanenburg where he did his PhD. However, we will continue to collaborate in various project including the FET-open project TOPSQUAD
Today, our paper on strained induced scalar potential in graphene appeared, see: publication. When graphene is uniaxially strained, the unit cell is elongated which leads to a chnage in the binding energy. This change has the same effect as an electrostatic