Silicon nanowire field-effect transistors

Silicon nanowire field-effect transistors

We have always been open to side-projects leading to applications. One was CNT reinforced composites where we have written an influential patent. The other is the exploration of ion-sensitive field-effect transistors for biochemical sensing. Though there was a substantial literature,

Graphene spintronics

Graphene spintronics

We have demonstrated efficient spin-injection into graphene using h-BN as tunneling barrier. We have used CVD-grown h-BN on CVD graphene, as well as few layer h-BN on a graphene h-BN stack. We have also looked into tunneling barriers made from

Nanodevices with ferromagnetic elements

Nanodevices with ferromagnetic elements

Ferromagnetic contacts can induce an exchange field into a nanodevice, but can also be used as a source of spin-polarized electrons and detector. In the latter case, so called tunneling magneto-resistance (TMR) devices are obtained when at least two contacts