Our paper entitled “Mobility Enhancement in Graphene by in situ Reduction of Random Strain Fluctuations” appeared in Phys. Rev. Lett. Bumps on a road slow down our pace, so do corrugations in graphene to travelling electrons. By flattening the corrugations
In this new publication, entitled: Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots Frederick and co-worker show that built-in quantum dots (QD) are very versatile for high resolution tunneling spectroscopy, since the tunnel coupling strength G1 and G2 can be
Lujun succeessfully defended his thesis on Tuesday Jan. 7th. Congratulations! Happy Lujun. Note, the magnified picture of his hat, shown on the bootm image! We are grateful to the two external reviewers: Prof. Dr. Christoph Stampfer (RWTH
Our paper entitled “New Generation of Moiré Superlattices in Doubly Aligned hBN/ Graphene/hBN Heterostructures” appeared in Nano Letters. Two incommensurate lattices in contact generate a Moiré superlattice. This happens for the pair hBN-G (hexagonal boron nitride-graphene). Take encapsulated graphene hBN-G-hBN.
Editors’ Suggestion Simon Zihlmann et al. “Nonequilibrium properties of graphene probed by superconducting tunnel spectroscopy”, Phys. Rev. B 99, 075419 (2019) In a conductor the current is carried by electrons. In a macroscopic conductor, the charge distribution is in local equilibrium,
Wideband and On-Chip Excitation for Dynamical Spin Injection into Graphene Graphene is an ideal material for spin transport, as very long spin-relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to
Simon Zihlmann successfully defended his PhD thesis “Spin and charge relaxation in graphene” on Friday 13th of April. We welcomed Prof. Dr. Bart J. van Wees (Univ. Groningen) and Porf. Dr. Christoph Stampfer (Univ. Aachen) as external PhD committee members.
We have always been open to side-projects leading to applications. One was CNT reinforced composites where we have written an influential patent. The other is the exploration of ion-sensitive field-effect transistors for biochemical sensing. Though there was a substantial literature,
We have demonstrated efficient spin-injection into graphene using h-BN as tunneling barrier. We have used CVD-grown h-BN on CVD graphene, as well as few layer h-BN on a graphene h-BN stack. We have also looked into tunneling barriers made from
Ferromagnetic contacts can induce an exchange field into a nanodevice, but can also be used as a source of spin-polarized electrons and detector. In the latter case, so called tunneling magneto-resistance (TMR) devices are obtained when at least two contacts